Ultra Low Power Temperature Compensated Complementary Metal Oxide Semiconductor Ring Oscillator in Subthreshold

Low power consumption, low chip area and fabrication in the standard complementary metal oxide semiconductor (CMOS) process are vital requirements for oscillators used low-cost bio-implantable wearable devices. Conventional ring (ROs) good candidates using biomedical applications. However, their oscillation frequency strongly depends on temperature. In this study, a temperature compensated oscillator with consumption is proposed. The transistors of proposed operate subthreshold region to achieve voltage performance. Since, region, conventional increases increase temperature, two current sources oscillator: independent source absolute (CTAT) source. circuit, CTAT forms small part total supplied its duty compensate deviation. Two prototypes were designed simulated target 1MHz commercially available 0.18µm RF-CMOS technology. thermal coefficient (TC) uncompensated was 2400 ppm/ºC from -40ºC 85ºC, though applying technique reduces TC 80.4 as 14.5µW.